You really do need to add pull downs on those Mosfet Gates. During reset or program crash etc. the GPIO's connected to the Gates may become undefined inputs and allow the Gates to float. If there's a load connected the Mosfets will partially turn on and operate in their linear region. Any amount of power might then be dissipated leading to rapid destruction of both transistor and ESP. 10K is about right.
One other thing - why have you got a 10k pull-up between CH_PD and 3V3? Did you mean to connect it to RST for "wake from deep sleep" If so, when you redraw it, put in 100R to 220R instead of 10K. RST has a 100nF capacitor to 0V inside the module (daft IMO) and the wake pulse is around 300uS. 10K would require at least 1000uS to get the RST pin low enough. See
this post for more detail.